Fabrication and characterization of tilted R-plane sapphire wafer for nonpolar a-plane GaN
نویسندگان
چکیده
منابع مشابه
Growth of Nonpolar a-plane GaN Templates for HVPE Using MOVPE on r-plane Sapphire
In order to establish the growth of nonpolar GaN templates for subsequent overgrowth via hydride vapor phase epitaxy (HVPE) or subsequent device epitaxy we studied the growth of a-plane oriented samples on r-plane sapphire via metal organic vapor phase epitaxy (MOVPE). The growth parameters like reactor pressure, growth temperature and V/IIIratio for the nucleation layer as well as for the GaN ...
متن کاملInvestigations of HVPE grown Nonpolar a-plane GaN on Slightly Misoriented r-plane Sapphire Substrates
We have investigated the growth of nonpolar GaN templates by hydride vapor phase epitaxy (HVPE). This includes a systematic study of misoriented r-plane sapphire wafers with a miscut angle up to ±1◦ towards the c-axis of the crystal as starting substrates. Starting with an AlN nucleation layer approximately 3.3μm of nonpolar a-plane GaN are grown by metalorganic vapor phase epitaxy (MOVPE). The...
متن کاملStructural characterization of non-polar (112 0) and semi-polar (1126) GaN films grown on r-plane sapphire
Thick GaN films, with (1120) or (1126) planes parallel to the r-plane of sapphire, were grown by molecular beam epitaxy using AlN or GaN buffer layers. Characterization by transmission electron microscopy revealed a high density of basal-plane stacking faults (BSFs) in the (1120) non-polar GaN (a-GaN) films. {1120} and {1010} prismatic-plane and {1102} pyramidal-plane stacking faults (SFs) doma...
متن کاملRefractive indices of ZnSiN2 on r-plane sapphire
II–IV–N2 wide band gap semiconductors such as ZnSiN2, ZnGeN2, and ZnSiGeN2 have potential uses for nonlinear materials and as lattice matching compounds for the growth of SiC and GaN devices. In this study, the dispersion of the TE and TM indices of refraction has been measured systematically using the prism coupling technique for an orthorhombic ZnSiN2 epitaxial layer grown on r-plane sapphire...
متن کاملElectrical characterization of low defect density nonpolar (112̄0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)
Shuji Nakamura University of California–Santa Barbara, Materials Department, Santa Barbara, California 93106; Exploratory Research for Advanced Technology, Japan Science and Technology Corporation (NICP/ERATO JST) Group, University of California–Santa Barbara, Santa Barbara, California 93106; and University of California–Santa Barbara, Electrical and Computer Engineering Department, Santa Barba...
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ژورنال
عنوان ژورنال: Journal of the Korean Crystal Growth and Crystal Technology
سال: 2011
ISSN: 1225-1429
DOI: 10.6111/jkcgct.2011.21.5.187